CS1N60A1H Datasheet - Huajing Microelectronics

CS1N60A1H Silicon N-Channel Power MOSFET

CS1N60 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 0.8 3 11 performance and enhance the avalanche energy. The transistor can be used in various power switc.

CS1N60A1H Features

* l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramete

CS1N60A1H-HuajingMicroelectronics.pdf