CS7N60FA9HD mosfet equivalent, silicon n-channel power mosfet.
z Fast Switching
z ESD Improved Capability
z Low Gate Charge (Typical Data:21nC)
z Low Reverse transfer capacitances(Typical:15pF)
z 100% Single Pulse avalanche ene.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
ID.
CS7N60FA9HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various pow.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 658.47KB)