CS7N60A7HD mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l ESD Improved Capability
l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
CS7N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transistor.
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