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BB501 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • High gain; PG = 21.5 dB typ. at f = 900 MHz.
  • Low noise; NF = 1.85 dB typ. at f = 900 MHz.
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “AS.
  • ”. 2. BB501C is individual type number of HI.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
BB501 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB501C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB501M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB502 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB502 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “AS–”. 2. BB501C is individual type number of HITACHI BBFET.
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