BB501 Overview
Key Features
- Build in Biasing Circuit; To reduce using parts cost & PC board space
- High gain; PG = 21.5 dB typ. at f = 900 MHz
- Low noise; NF = 1.85 dB typ. at f = 900 MHz
- Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions
- Marking is “AS–”
- BB501C is individual type number of HITACHI BBFET. BB501C
