BB501
Features
- Build in Biasing Circuit; To reduce using parts cost & PC board space.
- High gain; PG = 21.5 d B typ. at f = 900 MHz
- Low noise; NF = 1.85 d B typ. at f = 900 MHz
- Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200p F, Rs=0 conditions.
- Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
2 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
Notes: 1. Marking is “AS- ”. 2. BB501C is individual type number of HITACHI BBFET.
BB501C
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6
- 0 +6
- 0 20 100 150
- 55 to +150 Unit V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6
- - 0.5 0.5 7 19 Typ
- -...
