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BB301 Datasheet Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Manufacturer: Hitachi Semiconductor (now Renesas)

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Overview

BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-507 1st.

Key Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz).
  • Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline CMPAK.
  • 4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain BB301C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipa.

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