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BB305C - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5 V to 9 V supply voltage.
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C = 200 pF, Rs = 0 conditions.
  • Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB301 Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301 Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301C Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301M Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Full PDF Text Transcription

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BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608C (Z) 4th. Edition May 1998 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5 V to 9 V supply voltage. • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C = 200 pF, Rs = 0 conditions. • Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: 1. Marking is “EW–”. 2. BB305C is individual type number of HITACHI BBFET.
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