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BB301M - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz).
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain BB301M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Cha.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
BB301 Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301 Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301C Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB302C Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB302M Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Full PDF Text Transcription

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BB301M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-506 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4.
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