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HTIP41C - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HTIP41C datasheet PDF. This datasheet also covers the HTIP41C_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HTIP41C is designed for use in general purpose amplifier and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HTIP41C_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HTIP41C
Manufacturer Hi-Sincerity Mocroelectronics
File Size 43.04 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HTIP41C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HTIP41C NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6707 Issued Date : 1993.01.13 Revised Date : 2004.11.19 Page No. : 1/4 Description The HTIP41C is designed for use in general purpose amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .............................................................................................
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