Datasheet4U Logo Datasheet4U.com

HTIP42C - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HTIP42C datasheet PDF. This datasheet also covers the HTIP42C_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HTIP42C is designed for use in general purpose amplifier and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HTIP42C_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HTIP42C
Manufacturer Hi-Sincerity Mocroelectronics
File Size 37.36 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HTIP42C Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HTIP112A SILICON NPN POWER DARLINGTON TRANSISTOR HI-SINCERITY

Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HTIP41C NPN EPITAXIAL PLANAR TRANSISTOR
HTIP47 NPN EPITAXIAL PLANAR TRANSISTOR
HTIP49 NPN EPITAXIAL PLANAR TRANSISTOR
HTIP102 NPN EPITAXIAL PLANAR TRANSISTOR
HTIP105 PNP EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. HTIP42C PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6733 Issued Date : 1994.08.10 Revised Date : 2004.11.19 Page No. : 1/4 Description The HTIP42C is designed for use in general purpose amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .............................................................................................
Published: |