Download the HSC2228Y datasheet PDF. This datasheet also covers the HSC2228Y_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
The HSC2228Y is designed for high voltage amplifier applications.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 900 mW Maximum V
| Part number | HSC2228Y |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 45.37 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HSC2228Y Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HSC226 | Silicon Schottky Barrier Diode | Hitachi Semiconductor |
| HSC226 | Silicon Schottky Barrier Diode | SEMTECH |
| HSC226 | Silicon Schottky Barrier Diode | Kexin |
| HSC226 | Silicon Schottky Barrier Diode | Renesas |
| HSC200 | Aluminium Housed Power Resistors | TE |
| Part Number | Description |
|---|---|
| HSC2240 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HSC2625 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HSC2682 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HSC1815 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HSC1959 | NPN EPITAXIAL PLANAR TRANSISTOR |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
