Datasheet4U Logo Datasheet4U.com

HSC226 - Silicon Schottky Barrier Diode

Features

  • + - +0.1 1.6-0.1 0.77max 0.07max Absolute M axim um Ratings Ta = 25 Param eter Repetitive peak reverse voltage Non-Repetitive peak forward surge current Forward current Junction tem perature Storage tem perature Note 10m s Sinewave 1pulse Sym bol V RRM I FSM.
  • IF Tj T stg Value 25 200 50 125 -55 to +125 Unit V mA mA Electrical Characteristics Ta = 25 Param eter Forward voltage Reverse current Capacitance Sym bol VF IR C Conditions IF = 1 m A IF = 5 m A V R = 20 V V R =1 V, f = 1 M Hz.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HSC226 Silicon Schottky Barrier Diode Hitachi Semiconductor
HSC226 Silicon Schottky Barrier Diode SEMTECH
HSC226 Silicon Schottky Barrier Diode Renesas
HSC2228Y NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
HSC2240 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Other Datasheets by Kexin Semiconductor

Part Number Description

Full PDF Text Transcription

Click to expand full text
SMD Type Silicon Schottky Barrier Diode HSC226 Diodes SOD-523 +0.05 0.3-0.05 +0.1 1.2-0.1 Unit: mm +0.1 0.6-0.1 Low reverse current, Low capacitance. Ultra small Flat Package (UFP) is suitable for surface mount design. +0.05 0.8-0.05 Features + - +0.1 1.6-0.1 0.77max 0.07max Absolute M axim um Ratings Ta = 25 Param eter Repetitive peak reverse voltage Non-Repetitive peak forward surge current Forward current Junction tem perature Storage tem perature Note 10m s Sinewave 1pulse Sym bol V RRM I FSM * IF Tj T stg Value 25 200 50 125 -55 to +125 Unit V mA mA Electrical Characteristics Ta = 25 Param eter Forward voltage Reverse current Capacitance Sym bol VF IR C Conditions IF = 1 m A IF = 5 m A V R = 20 V V R =1 V, f = 1 M Hz M in Typ M ax 0.33 0.38 0.45 2.
Published: |