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HSB1426 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HSB1426 datasheet PDF. This datasheet also covers the HSB1426_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

DC-DC Converter

Features

  • Low Collector to Emitter Saturation Voltage TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 750 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSB1426_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSB1426
Manufacturer Hi-Sincerity Mocroelectronics
File Size 47.54 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSB1426 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HSB1426 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6506 Issued Date : 1994.03.25 Revised Date : 2004.11.30 Page No. : 1/4 Description DC-DC Converter Features • Low Collector to Emitter Saturation Voltage TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...............................................................................................................
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