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HI3669 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HI3669 datasheet PDF. This datasheet also covers the HI3669-Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HI3669 is designed for using in power amplifier applications, power switching application.

Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipa

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Note: The manufacturer provides a single datasheet file (HI3669-Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HI3669
Manufacturer Hi-Sincerity Mocroelectronics
File Size 43.90 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HI3669 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE9029 Issued Date : 1997.11.14 Revised Date : 2006.02.20 Page No. : 1/4 Description The HI3669 is designed for using in power amplifier applications, power switching application. Absolute Maximum Ratings (TA=25°C) TO-251 • Maximum Temperatures Tstg Storage Temperature.................................................................................................................... -55 ~ +150 °C Tj Junction Temperature ................................................................................................................................ +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...................................................................................
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