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HAD825 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HAD825 datasheet PDF. This datasheet also covers the HAD825_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Darlington transistor. Spec. No. : HE6406 Issued Date : 1994.01.13 Revised Date : 2002.03.06 Page No. : 1/3 Absolute Maximum Ratings TO-92.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipations Total Power Dissipation (Ta=25°C) 625 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 80 V VCES Collector to Emitter Voltage 55 V VEBO Emitter to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HAD825_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HAD825
Manufacturer Hi-Sincerity Mocroelectronics
File Size 29.51 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HAD825 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HAD825 NPN EPITAXIAL PLANAR TRANSISTOR Features Darlington transistor. Spec. No. : HE6406 Issued Date : 1994.01.13 Revised Date : 2002.03.06 Page No. : 1/3 Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum • Maximum Power Dissipations Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ................................................................................