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H2N4401 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the H2N4401 datasheet PDF. This datasheet also covers the H2N4401_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The H2N4401 is designed for general purpose switching and amplifier applications.

Key Features

  • Complementary to H2N4403.
  • High Power Dissipation: 625 mW at 25°C.
  • High DC Current Gain: 100-300 at 150mA.
  • High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H2N4401_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N4401
Manufacturer Hi-Sincerity Mocroelectronics
File Size 53.86 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N4401 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
H2N4403 PNP EPITAXIAL PLANAR TRANSISTOR
H2N4124 NPN EPITAXIAL PLANAR TRANSISTOR
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H2N3417 NPN SILICON TRANSISTOR
H2N3904 PNP EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6215 Issued Date : 1992.09.22 Revised Date : 2002.02.22 Page No. : 1/5 H2N4401 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N4401 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4403 • High Power Dissipation: 625 mW at 25°C • High DC Current Gain: 100-300 at 150mA • High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature...................................................................................................................