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H2N4401 - NPN EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

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H2N4401 NPN EPITAXIAL PLANAR TRANSISTOR by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – H2N4401

Datasheet Details

Part number	H2N4401
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	53.86 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N4401 Datasheet
Note	This datasheet PDF includes multiple part numbers: H2N4401, H2N4401_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the H2N4401 datasheet.

Product details

Description

The H2N4401 is designed for general purpose switching and amplifier applications.

Features

Complementary to H2N4403.
High Power Dissipation: 625 mW at 25°C.
High DC Current Gain: 100-300 at 150mA.
High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and.

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Published: Mar 22, 2005 |