HVV0912-150 datasheet, transistor equivalent, HVVi

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datasheet Download (Size : 761.42KB)

Features and benefits

* Silicon MOSFET Technology
* Operation from 24V to 50V
* High Power Gain
* Extreme Ruggedness
* Internal Input and Output Matching
* Excellent Th.

Application

Features
* Silicon MOSFET Technology
* Operation from 24V to 50V
* High Power Gain
* Extreme Ruggedness .

Description

The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 960MHz to 1215MHz. The high voltage HVVFET™ technology produces over 150W of pulsed output power while offering hi.

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