HPU600R700DN mosfet equivalent, silicon n-channel power mosfet.
l Superior switching performance l Low on resistance(Rdson≤0.7Ω) l Low gate charge (Typical Data:26nC) l Low reverse transfer capacitances(Typical:23.8pF) l 100% Single .
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
HPU600R700DN, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the double-shield Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power sw.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 403.33KB)