l Superior switching performance l Low on resistance(Rdson≤2.3Ω) l Low gate charge (Typical Data:11.5nC) l Low reverse transfer capacitances(Typical:5.8pF) l 100% Single.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

HPU600R2K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw.

HPU600R2K3DP

HPU600R1K6DN

HPU600R700DN

HPU600R760MB

HPU600R800DN

HPU650R1K1DN

HPU650R1K3DN

HPU650R1K9DN

HPU650R2K8DN

HPU650R420SA

HPU650R600SA

HPU650R900DN

HPU700R1K3SA

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts