l Superior switching performance l Low on resistance(Rdson≤1.3Ω) l Low gate charge (Typical Data:16.6nC) l Low reverse transfer capacitances(Typical:16.4pF) l 100% Singl.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

HPU650R1K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw.

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