Datasheet Details
| Part number | HPU650R2K8DN |
|---|---|
| Manufacturer | HUAJING MICROELECTRONICS |
| File Size | 407.32 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet | HPU650R2K8DN-HUAJINGMICROELECTRONICS.pdf |
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Overview: Silicon N-Channel Power MOSFET HPU650R2K8DN ○R General.
| Part number | HPU650R2K8DN |
|---|---|
| Manufacturer | HUAJING MICROELECTRONICS |
| File Size | 407.32 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet | HPU650R2K8DN-HUAJINGMICROELECTRONICS.pdf |
|
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： HPU650R2K8DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
Compare HPU650R2K8DN distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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