HM30P10K mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=--4.5V (Typ:48mΩ)
* Super high dense cell design
* Advanced trench process techn.
It is ESD protested.
General Features
* VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VG.
The +03. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
General Features
* VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Ty.
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