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SOT-723 Plastic-Encapsulate MOSFETS
HM3018JR N-Channel MOSFET
V(BR)DSS
RDS(on)MAX
8Ω@4V 30 V
13Ω@2.5V
ID
100mA
SOT-723
1. GATE 2. SOURCE 3. DRAIN
FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for
Portable equipment z Drive circuits can be simple z Parallel use is easy
MARKING
APPLICATION z Interfacing , Switching
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Drain-source voltage Gate-source voltage Continuous drain current Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
* Pw≤10µs ,Duty cycle≤1%
Symbol VDS VGS ID PD RθJA TJ Tstg
Value 30 ±20
±100 0.
HM3018JR Datasheet
