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HM5N60F - 600V N-Channel MOSFET

Download the HM5N60F datasheet PDF. This datasheet also covers the HM5N60 variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 4.5A, 600V, RDS(on) = 2.50Ω @VGS = 10 V.
  • Low gate charge ( typical 16nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D.
  • GDS TO-220 GD S TO-220F ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Ga.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM5N60-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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HM5NC65AF 650V N-Channel COOL MOSFET HKZ
HM5NC65AP 650V N-Channel COOL MOSFET HKZ
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HM50-xxx HM50 / HM51 Series / Miniature Power Inductors BI Technologies
HM500 HM500 Series / Ac/Dc Switching Modules Artesyn Technologies

Other Datasheets by H&M Semiconductor

Part Number Description
HM5N60 600V N-Channel MOSFET
HM5N60I 600V N-Channel MOSFET
HM5N60K 600V N-Channel MOSFET
HM5N65 650V N-Channel MOSFET
HM5N65F 650V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM5N60 / HM5N60F HM5N60 / HM5N60F 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 4.5A, 600V, RDS(on) = 2.
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