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HM5N06AR Datasheet, H&M Semiconductor

HM5N06AR mosfet equivalent, n-channel enhancement mode power mosfet.

HM5N06AR Avg. rating / M : 1.0 rating-11

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HM5N06AR Datasheet

Features and benefits


* VDS =60V,ID =5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ) Application
* Power switching application
* Hard switched and high fr.

Application

General Features
* VDS =60V,ID =5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ) Applicati.

Description

The HM5N06$5 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =60V,ID =5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS.

Image gallery

HM5N06AR Page 1 HM5N06AR Page 2 HM5N06AR Page 3

TAGS

HM5N06AR
N-Channel
Enhancement
Mode
Power
MOSFET
HM5N06APR
HM5N06R
HM5N20R
H&M Semiconductor

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