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HM5N06APR Datasheet, H&M Semiconductor

HM5N06APR mosfet equivalent, n-channel enhancement mode power mosfet.

HM5N06APR Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 461.95KB)

HM5N06APR Datasheet
HM5N06APR Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 461.95KB)

HM5N06APR Datasheet

Features and benefits


* VDS =60V,ID =5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ) Application
* Power switching application
* Hard switched and high fr.

Application

General Features
* VDS =60V,ID =5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ) Applicati.

Description

The HM5N06$35 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =60V,ID =5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VG.

Image gallery

HM5N06APR Page 1 HM5N06APR Page 2 HM5N06APR Page 3

TAGS

HM5N06APR
N-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

Manufacturer


H&M Semiconductor

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