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HM4953B Datasheet, H&M Semiconductor

HM4953B mosfet equivalent, dual p-channel enhancement mode power mosfet.

HM4953B Avg. rating / M : 1.0 rating-11

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HM4953B Datasheet

Features and benefits


* VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired
* .

Application

DD GG GENERAL FEATURES
* VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V
* High Pow.

Description

The HM4953B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. DD GG GENERAL FEATURES
* VDS = -.

Image gallery

HM4953B Page 1 HM4953B Page 2 HM4953B Page 3

TAGS

HM4953B
Dual
P-Channel
Enhancement
Mode
Power
MOSFET
HM4953
HM4953A
HM4953C
H&M Semiconductor

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