HM4853 datasheet, mosfet equivalent, H&M Semiconductor

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Features and benefits

* VDS = -20V,ID = -9A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V
* High power and current handing capability
* Lead free product is acquired
* .

Application

D1 G1 G2 D2 S1 S2 Schematic diagram General Features
* VDS = -20V,ID = -9A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) .

Description

The +0 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D1 G1 G2 D2 S1 S2 Schematic diagram.

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