HM4806 Datasheet, H&M semi

* VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ) Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche vol.

General Features
* VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ) Schematic diagram
* High density ce.

The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ) Schematic diagra.

HM4803

HM4805

HM4805A

HM4805B

HM4812

HM4813

HM4821

HM48416AP

HM48416AP-12

HM48416AP-15

HM48416AP-20

HM4843

HM4853