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HM4806 Datasheet, H&M semi

HM4806 mosfet equivalent, dual n-channel mosfet.

HM4806 Avg. rating / M : 1.0 rating-18

datasheet Download (Size : 579.02KB)

HM4806 Datasheet
HM4806
Avg. rating / M : 1.0 rating-18

datasheet Download (Size : 579.02KB)

HM4806 Datasheet

Features and benefits


* VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ) Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche vol.

Application

General Features
* VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ) Schematic diagram
* High density ce.

Description

The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ) Schematic diagra.

Image gallery

HM4806 Page 1 HM4806 Page 2 HM4806 Page 3

TAGS

HM4806
Dual
N-Channel
MOSFET
H&M semi

Manufacturer


H&M semi

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