HM4821 mosfet equivalent, dual p-channel enhancement mode power mosfet.
* VDS =-60V,ID =-6.5A RDS(ON) <45mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good s.
G1
D1
G2
D2
General Features
* VDS =-60V,ID =-6.5A RDS(ON) <45mΩ @ VGS=-10V
* High density cell design for.
The HM4821 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
G1
D1
G2
D2
General Features
* VDS =-60V,ID =-6.5A RDS(ON) <45mΩ @ VGS=-1.
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