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HM4618SP - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Description

The HM4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

Features

  • VSSS =20V,IS =6A.
  • 2.5V drive.
  • Common-drain type.
  • 2KV HBM Package Information.
  • Minimum Packing Quantity : 5,000 pcs. /reel.

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Datasheet Details

Part number HM4618SP
Manufacturer H&M Semiconductor
File Size 489.95 KB
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet HM4618SP Datasheet

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Full PDF Text Transcription

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HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description The HM4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. Package Dimensions Unit : mm General Features ● VSSS =20V,IS =6A ● 2.5V drive ● Common-drain type ● 2KV HBM Package Information ● Minimum Packing Quantity : 5,000 pcs.
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