HM4618SP transistor equivalent, common-drain dual n-channel enhancement mode field effect transistor.
* VSSS =20V,IS =6A
* 2.5V drive
* Common-drain type
* 2KV HBM
Package Information
* Minimum Packing Quantity : 5,000 pcs./reel
Application
* Lithi.
The HM4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional.
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