HM3407A mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -4.1A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired
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GENERAL FEATURES
* VDS = -30V,ID = -4.1A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V
* High Power and .
The HM3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS = -30V,ID = -4.1A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V
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