HM3400DR mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 30V,ID = 8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
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S Schematic diagram
* High Power and current handing capa.
*Load switch
*Power management
DFN2X2-6L bottom view
Package Marking And Ordering Information
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The HM3400DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
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