GDSSF3611E mosfet equivalent, mosfet.
* Advanced trench MOSFET process technology
* Special designed for PWM, load switching and
general purpose applications
* Ultra low on-resistance with low ga.
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating t.
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use i.
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