GDSSF2301B mosfet equivalent, mosfet.
* VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 100mΩ @ VGS=-4.5V
* High Power and current handing capability
* Lead free product is acquired
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GENERAL FEATURES
* VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 100mΩ @ VGS=-4.5V
* High P.
The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
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GENERAL FEATURES
* VDS = -2.
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