GT125N10 - MOSFET

Description

GT125N10 use advanced SFGMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

This device is specially designed to get better ruggedness and suitable to use in motor control applications.

Features

Low RDS(on) & FOM.
Extremely low switching loss.
Excellent stability and uniformity.
Fast switching and soft recovery.
RoHS Compliant VDSS RDS(ON) ID @10V (Typ. ) 100V 4.1 mΩ 130A.

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GT125N10 mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	GT125N10
Manufacturer	GOFORD
File Size	3.85 MB
Description	MOSFET
Datasheet	GT125N10 Datasheet

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Full PDF Text Transcription (Reference)

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GOFORD GT125N10  General Description GT125N10 use advanced SFGMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in motor control applications. Features  Low RDS(on) & FOM  Extremely low switching loss  Excellent stability and uniformity  Fast switching and soft recovery  RoHS Compliant VDSS RDS(ON) ID @10V (Typ.) 100V 4.