50N03 - MOSFET

Description

The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

It can be used in a wide Vanety of applications .

Features

VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stabilty and unifomity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability TO-252-2L top view.

📥 Download Datasheet

Datasheet Details

Part number	50N03
Manufacturer	GFO
File Size	1.06 MB
Description	MOSFET
Datasheet	50N03 Datasheet

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Full PDF Text Transcription

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DESCRIPTION The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 50N03 VDS 30V RDS(ON) -- ID 50A GENERAL FEATURES � VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability TO-252-2L top view Application � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BRAND 50N03 TO-252-2L OGFD www.goford.

Published: Apr 8, 2019 |