50N035 fet equivalent, n-channel fet.
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* Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transie.
such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to tra.
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switchi.
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