50N03 mosfet equivalent, n-channel mosfet.
* Advanced trench process technology
* High density cell design for ultra low on-resistance
* Fully characterized avalanche voltage and current
2.Application.
* VDSS=30V,RDS(on)=6.5mΩ,ID=50A
* Vds=30V
* RDS(ON)=6.5mΩ(Max.),VGS@10V,Ids@30A
* RDS(ON)=9.5mΩ(Max.),VG.
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