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GFD

80N03 Datasheet Preview

80N03 Datasheet

MOSFET

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DESCRIPTION
The 80N03 uses advanced trench technology
And design to provide excellent RDS (ON ) with
Low gate charge . It can be used in a wide
Vanety of applications .
80N03
VDS
30V
RDS(ON)
--
ID
80A
GENERAL FEATURES
VDS = 30 V, ID = 80 A
RDS(ON) < 6 mΩ @ VGS = 10 V
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stabilty and unifomity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
TO-252-2L top view
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Ordering Information
PART NUMBER PACKAGE BRAND
80N03
TO-252-2L
OGFD
www.goford.cn TEL0755-86350980 FAX0755-86350963




GFD

80N03 Datasheet Preview

80N03 Datasheet

MOSFET

No Preview Available !

80N03
Absolute Maximum Ratings (TC=25, unless otherwise noted)
Symbol
Parameter
80N03
Units
VDS
ID
IDM
PD
VGS
EAS
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Drain Current-Continuous(Tc=100)
Pulsed Drain Current
Power Dissipation
Gate-to-Source Voltage
Single PulseAvalanche Energy
Operating Junction and Storage Temperature Range
30
80
50
170
83
± 20
150
-55 to 175
V
A
W
V
mJ
Thermal Resistance
Symbol
RθJC
Parameter
Junction-to-Case
Min. Typ. Max. Units Test Conditions
--
--
1.8
/W
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175.
OFF Characteristics TJ=25unless otherwise specified
Symbol
BVDSS
IGSS
Parameter
Min.
Drain-to-Source
Voltage
Breakdown
30
Gate-to-Source Forward Leakage --
Typ.
--
--
Max. Units Test Conditions
-- V VGS=0, ID=250µA
±100 nA VDS=0V, VGS=±20V
IDSS
Zero Gate Voltage Drain Current -- --
1 µA VDS=30V, VGS=0V
ON Characteristics TJ=25unless otherwise specified
Symbol
RDS(ON)
VGS(TH)
Parameter
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage, Figure 12.
Min.
--
1.0
Typ.
4.8
1.5
Max Units Test Conditions
6.0 mΩ VGS=10V,ID=30A
3.0 V VDS= VGS, ID=250µA
Gfs Forward Transconductance
20 --- -- S VDS=10V, ID=24A
www.goford.cn TEL0755-86350980 FAX0755-86350963


Part Number 80N03
Description MOSFET
Maker GFD
PDF Download

80N03 Datasheet PDF






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