80N03 datasheet, mosfet equivalent, GFD

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Features and benefits

� VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and.

Application

. 80N03 VDS RDS(ON) ID 30V -- 80A GENERAL FEATURES � VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V � High de.

Description

The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 80N03 VDS RDS(ON) ID 30V -- 80A GENERAL FEATURES � VDS = 30 V, ID = 80 A RDS(ON) < 6 .

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