MRF6V4300NBR1 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large--Signal Impedance Parameters
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Gr.
with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific app.
Part Number
B1 Short Ferrite Bead
2743019447
B2, B3
Long Ferrite Beads
2743021447
C1
47 μF, 25 V, Tantalum Capacitor
T491B476M025AT
C2, C3
22 μF, 50 V, Chip Capacitors
C5750JF1H226ZT
C4, C5, C6, C7
1 μF, 100 V, Chip Capacitors
C3225JB2.
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