MRF6V13250HSR3 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large--Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation.
operating at 1300 MHz. These devices are suitable for use in pulsed and CW applications.
* Typical Performance: VDD .
22 μF, 35 V Tantalum Capacitors 0.1 μF, 50 V Chip Capacitors 100 pF Chip Capacitors 4.7 pF Chip Capacitor 1000 pF Chip Capacitors 1000 pF Chip Capacitors 10K pF Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 15 Ω, 1/4 W Chip Resistor 0.030″, εr.
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