MRF6V10250HSR3 transistor equivalent, rf power field effect transistor.
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* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximu.
operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed appl.
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