FIR3441AG datasheet, mosfet equivalent, First Semiconductor

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Features and benefits

* VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired
*.

Application

General Features
* VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V
* High Power and .

Description

The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features
* VDS = -30V,ID.

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