FIR150N06PG datasheet, mosfet equivalent, First Semiconductor

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Features and benefits

ƽ VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and unifo.

Application

General Features ƽ VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V ƽ High density cell design for ultra low Rdson ƽ Fully ch.

Description

The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V ƽ High density cell design fo.

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