FIR2N60FG mosfet equivalent, advanced n-ch power mosfet.
* High Voltage: BVDSS=600V(Min.)
* Low Crss : Crss=3.4F(Typ.)
* Low gate charge : Qg= 7.0nC(Typ.)
* Low RDS(on) :RDS(on)=7.0Ω(Max.)
G D S
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G
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Marking.
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