Datasheet4U Logo Datasheet4U.com

RMWP38001 - 38 GHZ Power Amp

Description

The RMWP38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications.

Features

  • 4mil substrate.
  • Small-signal gain 22dB (typ. ).
  • 1dB compressed Pout 22dBm (typ. ).
  • Chip size 3.4mm x 1.4mm Device Absolute Ratings Symbol Vd Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Simultaneous (Vd.
  • Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 8 483 +8 -30 to +85 -55 to +125 46 Units V V mA dBm °C °C °C/W.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RMW03L Wirewound/Metal Film Resistors Vishay Intertechnology
RMW05L Wirewound/Metal Film Resistors Vishay Intertechnology
RMW07L Wirewound/Metal Film Resistors Vishay Intertechnology
RMW10L Wirewound/Metal Film Resistors Vishay Intertechnology
RMW200N03 4.5V Drive Nch MOSFET Rohm

Other Datasheets by Fairchild (onsemi)

Part Number Description
RMWP23001 23 GHZ Power Amp
RMWP26001 26 GHZ Power Amp
RMWB04001 4 GHZ Buffer Amp
RMWB11001 11 GHZ Buffer Amp
RMWB12001 12 GHZ Buffer Amp

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RMWP38001 www.DataSheet4U.com June 2004 RMWP38001 37–40 GHz Power Amplifier MMIC General Description The RMWP38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild Semiconductor amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWP38001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications. Features • 4mil substrate • Small-signal gain 22dB (typ.) • 1dB compressed Pout 22dBm (typ.) • Chip size 3.4mm x 1.