The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Data Sheet
4.5V Drive Nch MOSFET
RMW200N03
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
PSOP8
0.5 5.0 6.0
(8)
(7)
(6)
(5)
Features 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 3) Low voltage drive(4.5V drive).
0~0.1
0.5
1pin mark
(1) (2)
(3)
(4) 0.4
0.22 0.9
1.27
5.0
Application Switching
Packaging specifications Package Code Basic ordering unit (pieces) RMW200N03 Type Taping TB 2500
Inner circuit
(8) (7) (6) (5)
Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 MOUNTED ON 40mm×40mm Cu BOARD
Symbol VDSS VGSS
Limits 30 20 20
www.
RMW200N03 Datasheet
