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RMWP23001 - 23 GHZ Power Amp

Description

The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications.

Features

  • 4mil substrate.
  • Small-signal gain 22.5dB (typ. ).
  • 1dB compressed Pout 23.5dBm (typ. ).
  • Chip size 2.6mm x 1.2mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd.
  • Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 607 +8 -30 to +85 -55 to +125 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RMWP23001 www.DataSheet4U.com June 2004 RMWP23001 21–24 GHz Power Amplifier MMIC General Description The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild Semiconductor amplifiers, multipliers and mixers it forms part of a complete 23 GHz transmit/receive chipset. The RMWP23001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications. Features • 4mil substrate • Small-signal gain 22.5dB (typ.) • 1dB compressed Pout 23.5dBm (typ.) • Chip size 2.6mm x 1.
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