RF1S30N06LE
Overview
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
- 30A, 60V
- rDS(ON) = 0.047Ω
- 2kV ESD Protected
- Temperature Compensating PSPICE Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
