Datasheet4U Logo Datasheet4U.com

IRFW550A - (IRFI550A / IRFW550A) Advanced Power MOSFET

Download the IRFW550A datasheet PDF. This datasheet also covers the IRFI550A variant, as both devices belong to the same (irfi550a / irfw550a) advanced power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ. ) Ο IRFW/I550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Conti.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFI550A_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFW450 N-Channel MOSFET Transistor Inchange Semiconductor
IRFW610A Power MOSFET Samsung
IRFW630A Power MOSFET Samsung
IRFW630B N-Channel MOSFET ON Semiconductor
IRFW720A Power MOSFET Samsung

Other Datasheets by Fairchild (onsemi)

Part Number Description
IRFW520A Advanced Power MOSFET
IRFW530A Advanced Power MOSFET
IRFW540A Advanced Power MOSFET
IRFW610B N-Channel MOSFET
IRFW614A Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.) Ο IRFW/I550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C) * Ο Ο Ο Value 100 40 28.